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FFSD1065B SiC Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 10 A, 650 V, D2, DPAK FFSD1065B .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Free

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1, 3 Cathode 2 Anode Schottky Diode 3 1 2 DPAK CASE 369AS MARKING DIAGRAM AYWWZZ FFS D1065B A YWW ZZ FFSD1065B = Assembly Plant Code = Date Code (Year & Week) = Lot Code = Sp

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ON Semiconductor FFSD1065B-like datasheet