FFSD1065B Datasheet (ON Semiconductor)

FFSD1065B, SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the

FFSD1065B Features

* Max Junction Temperature 175°C

* Avalanche Rated 49 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR Free