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FFSD1065B-F085 Silicon Carbide Schottky Diode

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Description

Silicon Carbide Schottky Diode 650 V, 10 A FFSD1065B-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters www. onsemi. com 1., 3. Cathode 2. Anode Schottky Diode DPAK
* 3 (TO
* 252, 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FFSD 1065B $Y &Z &3 &K FFSD1065B = ON Semiconductor Log

FFSD1065B-F085 Distributors

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📌 All Tags

FFSD1065B-F085 Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSD1065B-F085-like datasheet
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