FFSD10120A - Silicon Carbide Schottky Diode

ON Semiconductor

FFSD10120A Datasheet Preview — Preview of FFSD10120A PDF

Datasheet Details

Part number	FFSD10120A
Manufacturer	ON Semiconductor ↗
File Size	845.18 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSD10120A-ONSemiconductor.pdf

FFSD10120A Product details

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Features

Max Junction Temperature 175 °C.
Avalanche Rated 100 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery / No Forward Recovery.

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Published: Nov 7, 2019 |