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FFSD10120A Silicon Carbide Schottky Diode

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Description

FFSD10120A * Silicon Carbide Schottky Diode www.onsemi.com FFSD10120A Silicon Carbide Schottky Diode 1200 V, 10 A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175 °C
* Avalanche Rated 100 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling

Applications

* General Purpose
* SMPS, Solar Inverter, UPS

FFSD10120A Distributors

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📌 All Tags

FFSD10120A Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSD10120A-like datasheet
FFSD1065A
FFSD1065B
FFSD1065B-F085
FFSD0465A
FFSD0665A