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FFSD1065A Silicon Carbide Schottky Diode

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Description

Silicon Carbide Schottky Diode 650 V, 10 A FFSD1065A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 64 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www. onsemi. com 1, 2, 4. Cathode 3. Anode Schottky Diode 4 12 3 DPAK3 (TO
* 252, 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FFS D1065A $Y &Z &3 &K FFSD1065A = ON Semiconductor Logo = Assembly Plan

FFSD1065A Distributors

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📌 All Tags

FFSD1065A Silicon Carbide Schottky Diode ON Semiconductor
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