FFSD08120A Silicon Carbide Schottky Diode

ON Semiconductor

Description

Silicon Carbide Schottky Diode 1200 V, 8 A FFSD08120A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSD08120A
Manufacturer: ON Semiconductor ↗
File Size: 459.70 KB
Datasheet: FFSD08120A-ONSemiconductor.pdf
Description: Silicon Carbide Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 80 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www. onsemi. com 1, 2, 4. Cathode 3. Anode Schottky Diode 4 12 3 DPAK3 CASE 369AS MARKING DIAGRAM $Y&Z&3&K FFS D08120A $Y &Z &3 &K FFSD08120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date

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FFSD08120A Silicon Carbide Schottky Diode ON Semiconductor

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