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FQD9N25 N-Channel MOSFET

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Description

FQD9N25 / FQU9N25 * N-Channel QFET® MOSFET FQD9N25 / FQU9N25 N-Channel QFET® MOSFET 250 V, .4 A, PΩ .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 7.4 A, 250 V, RDS(on) = 420 mΩ (Max. ) @VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 15.5 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol , 5 5 , < 5 < 

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