* Silicon Gate for Fast Switching Speeds
* Low RDS(on)
* 0.15 Ω max
* The SOT
* 223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
* Available in 12
MMFT3055ET1 Datasheet (187.92 KB)
MMFT3055ET1
187.92 KB
Power mosfet.
MMFT3055E
Power MOSFET 1.7 Amp, 60 Volts
N
*Channel TMOS E
*FETt SOT
*223
This advanced E
*FET is a TMOS Medium Power MOS.
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