MMFT3055ET1, MMFT3055E Datasheet - ON Semiconductor

MMFT3055ET1 Power MOSFET

MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N Channel TMOS E FETt SOT 223 This advanced E FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc dc converters and PWM motor controls, these devices are particularly w.

MMFT3055ET1 Features

* Silicon Gate for Fast Switching Speeds

* Low RDS(on)

* 0.15 Ω max

* The SOT

* 223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die

* Available in 12

MMFT3055E-ONSemiconductor.pdf