MMFT2N25E Datasheet - ON Semiconductor

MMFT2N25E High Energy Power FET

MMFT2N25E Product Preview High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specifi.

MMFT2N25E Features

* bility of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters

MMFT2N25E Datasheet (146.47 KB)