* bility of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters
MMFT2N25E Datasheet (146.47 KB)
MMFT2N25E
146.47 KB
High energy power fet.
MMFT2N25E
Product Preview High Energy Power FET
N
*Channel Enhancement
*Mode Silicon Gate
This advanced high voltage MOSFET is designed.
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