MTB9N25E Datasheet (ON Semiconductor)

MTB9N25E, High Energy Power FET

MTB9N25E Designer’s™ Data Sheet TMOS E FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation

MTB9N25E Features

* d to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally sn