Datasheet Specifications
- Part number
- MTP6N60E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 167.80 KB
- Datasheet
- MTP6N60E-ONSemiconductor.pdf
- Description
- Power Field Effect Transistor
Description
MTP6N60E Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This high voltage MOSFET uses an advanced termination s.
Features
* DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Variation http://onsemi. com 5 MTP6N60E VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 300 QT 10 8 6 Q1 VGS 200 Q2 4 ID = 6 A 100 2 TJ = 25°C Q3 VDS 00 0 6 12 18 24 30 36 QT, TOTAL CHARGE (nC) Figure 8. GateApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP6N60E Distributors
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