MTP6N60E Datasheet - ON Semiconductor

MTP6N60E Power Field Effect Transistor

MTP6N60E Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for high voltage.

MTP6N60E Features

* DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Variation http://onsemi.com 5 MTP6N60E VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 300 QT 10 8 6 Q1 VGS 200 Q2 4 ID = 6 A 100 2 TJ = 25°C Q3 VDS 00 0 6 12 18 24 30 36 QT, TOTAL CHARGE (nC) Figure 8. Gate

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MTP6N60E Datasheet (167.80 KB)