* DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Variation http://onsemi.com 5 MTP6N60E VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 300 QT 10 8 6 Q1 VGS 200 Q2 4 ID = 6 A 100 2 TJ = 25°C Q3 VDS 00 0 6 12 18 24 30 36 QT, TOTAL CHARGE (nC) Figure 8. Gate
* To
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MTP6N60E Datasheet (167.80 KB)
MTP6N60E
167.80 KB
Power field effect transistor.
MTP6N60E
Power Field Effect Transistor
N
*Channel Enhancement
*Mode Silicon Gate
This high voltage MOSFET uses an advanced termination s.
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