MTP6P20E Datasheet - ON Semiconductor

MTP6P20E Power MOSFET

MTP6P20E Preferred Device Power MOSFET 6 Amps, 200 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutati.

MTP6P20E Features

* V ID = 6.0 A 120 VGS = 10 V TJ = 25°C 100 6 80 4 ID = 6.0 A TJ = 25°C 40 2 Q3 0 VDS 0 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate

* To

* Source and Drain

* To

* Source Voltage versus Total Charge tr td(off) 10 tf td(on) 1 1 10 RG, GATE RESISTANC

MTP6P20E Datasheet (199.19 KB)