Part number:
NTD5P06V
Manufacturer:
File Size:
118.94 KB
Description:
Power mosfet.
www.DataSheet4U.com
MTD5P06V
Preferred Device
Power MOSFET 5 Amps, 60 Volts
P
*Channel DPAK
This Power MOSFET is designed to withstand high e.
* 5 A 12 Q1 Q2 QT VGS 60 54 48 42 36 30 24 18 12 6 0 14 100 VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) TJ = 25°C ID = 5 A VDD = 30 V VGS = 10 V td(off) 10 tf td(on) tr t, TIME (ns) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate
* To
* Sourc
NTD5P06V Datasheet (118.94 KB)
NTD5P06V
118.94 KB
Power mosfet.
www.DataSheet4U.com
MTD5P06V
Preferred Device
Power MOSFET 5 Amps, 60 Volts
P
*Channel DPAK
This Power MOSFET is designed to withstand high e.
📁 Related Datasheet
NTD50 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD50N03R - Power MOSFET
(ON Semiconductor)
NTD50N03R Power MOSFET
25 V, 45 A, Single N−Channel, DPAK
Features
• • • • •
Planar Technology Low RDS(on) to Minimize Conduction Losses Low Capacit.
NTD5406N - Power MOSFET
(ON Semiconductor)
.
NTD5407N - Power MOSFET
(ON Semiconductor)
NTD5407N Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
..
• • • •
Low RDS(on) High Current Capability Low Gate Charge T.
NTD5413N - Power MOSFET
(ON Semiconductor)
NTD5413N
Power MOSFET
30 Amps, 60 Volts Single N−Channel DPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • These a.
NTD5414N - Power MOSFET
(ON Semiconductor)
NTD5414N, NVD5414N
Power MOSFET
24 A, 60 V Single N−Channel DPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • NVD.
NTD57A - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD57A
Features
Thyristor/Diode Module, 50A
• Improved glass passivation for high reliability • Exceptional stability at .
NTD5802N - Power MOSFET
(ON Semiconductor)
NTD5802N Power MOSFET
Features
40 V, Single N−Channel, 101 A DPAK
• • • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize.