NTD5P06V Datasheet - ON Semiconductor

NTD5P06V Power MOSFET

www.DataSheet4U.com MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected vol.

NTD5P06V Features

* 5 A 12 Q1 Q2 QT VGS 60 54 48 42 36 30 24 18 12 6 0 14 100 VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) TJ = 25°C ID = 5 A VDD = 30 V VGS = 10 V td(off) 10 tf td(on) tr t, TIME (ns) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate

* To

* Sourc

NTD5P06V Datasheet (118.94 KB)