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BSS138 N-Channel MOSFET

BSS138 Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General .
These N. Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

BSS138 Features

* 0.22 A, 50 V
* RDS(on) = 3.5 W @ VGS = 10 V
* RDS(on) = 6.0 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(on)
* Rugged and Reliable
* Compact Industry Standard SOT
* 23 Surface Mount Package
* HBM Class 0A, MM Class M

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