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H11F1M Photo FET Optocouplers

H11F1M Description

Photo FET Optocouplers H11F1M, H11F2M, H11F3M General .
The H11FXM series consists of a Gallium. Aluminum. Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo.

H11F1M Features

* As a Remote Variable Resistor:
* ≤ 100 W to ≥ 300 MW
* ≤15 pF Shunt Capacitance
* ≥100 GW I/O Isolation Resistance
* As an Analog Switch:
* Extremely Low Offset Voltage
* 60 Vpk
* pk Signal Capability
* No Charge Injection or La

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