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MJ21195G - Silicon Power Transistors

MJ21195G Description

Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed .

MJ21195G Features

* Total Harmonic Distortion Characterized
* High DC Current Gain
* Excellent Gain Linearity
* High SOA
* These Devices are Pb
* Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Collector
* Emitter Voltage Collector
* Base Voltage Emitter
* Base Vo

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📁 Related Datasheet

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Silicon Power Transistors ON Semiconductor
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