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MTP4N50E High Energy Power FET

MTP4N50E Description

MTP4N50E Designer’s™ Data Sheet TMOS E *FET.™ High Energy Power FET N *Channel Enhancement *Mode Silicon Gate This advanced high .

MTP4N50E Features

* n current versus re
* applied drain voltage when the source
* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or ha

MTP4N50E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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