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NVBG015N065SC1 - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NVBG015N065SC1
Manufacturer	ON Semiconductor ↗
File Size	309.97 KB
Description	SiC MOSFET
Datasheet	NVBG015N065SC1-ONSemiconductor.pdf

NVBG015N065SC1 Product details

Features

Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 283 nC).
Low Effective Output Capacitance (Coss = 424 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Oct 13, 2024 |