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NVH4L025N065SC1 - N-Channel MOSFET

NVH4L025N065SC1 Description

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 .

NVH4L025N065SC1 Features

* Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 164 nC)
* Low Capacitance (Coss = 278 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Pb
* Free an

NVH4L025N065SC1 Applications

* Automotive On Board Charger
* Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 650 V Gate
* to
* Source Voltage VGS
* 8/+22 V Recommended Op

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N-Channel MOSFET ON Semiconductor
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