Datasheet Details
- Part number
- NVH4L045N065SC1
- Manufacturer
- ON Semiconductor ↗
- File Size
- 346.10 KB
- Datasheet
- NVH4L045N065SC1-ONSemiconductor.pdf
- Description
- SiC MOSFET
NVH4L045N065SC1 Description
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 .
NVH4L045N065SC1 Features
* Typ. RDS(on) = 33 mW @ VGS = 18 V
Typ. RDS(on) = 45 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 105 nC)
* High Speed Switching with Low Capacitance (Coss = 162 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This De
NVH4L045N065SC1 Applications
* Automotive On Board Charger
* Automotive DC
* DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage
VDSS
650
V
Gate
* to
* Source Voltage
VGS
* 8/+22 V
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