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PCDP0865G1 - Silicon Carbide Schottky Barrier Diode

PAN JIT

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Datasheet Details

Part number: PCDP0865G1
Manufacturer: PAN JIT
File Size: 1.82 MB
Datasheet: PCDP0865G1-PANJIT.pdf
Description: Silicon Carbide Schottky Barrier Diode

PCDP0865G1 Product details

Features

TO-220AC.
Temperature Independent Switching Behavior.
High Surge Current Capability.
Positive Temperature Coefficient on VF.
Low Conduction Loss.
Zero Reverse Recovery.
High junction temperature 175 oC.
Lead free in compliance with EU RoHS 2.0.
Green molding compound as per IEC 61249 standard Mechanical Data.
Case: TO-220AC molded plastic.
Terminals: Solderable per MIL-STD-750, Method 2026.
Approx. Weight: 0.067 ounces, 1.89 grams Appli.

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Silicon Carbide Schottky Barrier Diode PAN JIT

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