* 0.45
* 0.1 1.27 +0.2 0.45
* 0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO
* 92 EIAJ:SC
* 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage
2SA1127
Panasonic Semiconductor
37.15 KB
Silicon npn epitaxial planer type transistor.
Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 5.0±0.2 Unit: mm 4.0±0.2.
📁 Related Datasheet
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2SA1121 Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1121 Silicon PNP Transistor (Kexin)
2SA1122 Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1122 PNP Transistors (Kexin)
2SA1122 Silicon PNP Epitaxial Transistor (Renesas)
2SA1123 Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA1123 Silicon NPN epitaxial planer type Transistor (Panasonic Semiconductor)
