2SB1297 Datasheet - Panasonic Semiconductor

2SB1297 Silicon PNP Transistor

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 120 120 5 1 0.5 1.

2SB1297 Features

* 0.45

* 0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO

* 92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition f

2SB1297 Datasheet (37.86 KB)