* 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with / one screw φ3.1±0.1 1.3±0.2 1.4±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Para
2SC3871
Panasonic Semiconductor
221.52 KB
Silicon npn transistor.
Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
4.2±.
📁 Related Datasheet
2SC3870 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3870 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3870
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
4.2±.
2SC3870 - SILICON POWER TRANSISTOR
(SavantIC)
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2SC3871 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3872 - Silicon NPN triple diffusion planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3872
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
q q q q
16.2±0.5 12.5 3.
2SC3873 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area o.
2SC3873 - SILICON POWER TRANSISTOR
(SavantIC)
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2SC3873
DESCRIPTION ·With TO-3PFa package ·High VCB.
2SC3874 - Silicon NPN Transistor
(Panasonic Semiconductor)
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Power Transistors
2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
Uni.
