q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Co
✔ 2SK3029 Application
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain
2SK302, Toshiba Semiconductor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK302
2SK302
FM Tuner, VHF RF Amplifier Applications
Unit: mm
• Low reverse transfer c.
2SK3022, Panasonic Semiconductor
Power F-MOS FETs
2SK3022 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3023, Panasonic Semiconductor
Power F-MOS FETs
2SK3023 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3024, Panasonic Semiconductor
Power F-MOS FETs
2SK3024 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3025, Panasonic Semiconductor
Power F-MOS FETs
2SK3025 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3026, Panasonic Semiconductor
Power F-MOS FETs
2SK3026 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3027, Panasonic Semiconductor
Power F-MOS FETs
2SK3027 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
2SK3028, Panasonic Semiconductor
Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low.
