Part number:
LN172
Manufacturer:
Panasonic Semiconductor
File Size:
36.15 KB
Description:
Gaalas infrared light emitting diode.
* High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability 1. 0± 0. 15 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 ø4.2 +0.2
LN172
Panasonic Semiconductor
36.15 KB
Gaalas infrared light emitting diode.
📁 Related Datasheet
LN170WP38 Round Type LED (Panasonic)
LN175 GaAlAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LN100 N-Channel MOSFET (Supertex)
LN1001 single-chip Power Bank dedicated IC (natlinear)
LN10N10 10A/100V withstand voltage N-channel enhanced FET (natlinear)
LN1120 300mA Low Dropout CMOS Voltage Regulators (natlinear)
LN1121 Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)
LN1130 High Ripple-Rejection Low Dropout CMOS Voltage Regulator (natlinear)
LN113006 General Purpose Relays (TE)
LN113009 General Purpose Relays (TE)
