Datasheet Specifications
- Part number
- LN172
- Manufacturer
- Panasonic Semiconductor
- File Size
- 36.15 KB
- Datasheet
- LN172_PanasonicSemiconductor.pdf
- Description
- GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 12 mW (typ. ) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good optical power output linearity with respect to input current Long lifetime, high reliability 1. 0± 0. 15 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 ø4.2 +0.2LN172 Distributors
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