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LN172 GaAlAs Infrared Light Emitting Diode

LN172 Description

Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems .

LN172 Features

* High-power output, high-efficiency : PO = 12 mW (typ. ) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good optical power output linearity with respect to input current Long lifetime, high reliability 1. 0± 0. 15 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 ø4.2 +0.2

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Datasheet Details

Part number
LN172
Manufacturer
Panasonic Semiconductor
File Size
36.15 KB
Datasheet
LN172_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

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GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN172-like datasheet