LN175 - GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN175
Manufacturer	Panasonic Semiconductor
File Size	42.41 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN175_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 12 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ. ) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambien.

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Published: Mar 22, 2005 |