* High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 m
LN175
Panasonic Semiconductor
42.41 KB
Gaalas infrared light emitting diode.
Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
Featu.
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