LN175 - GaAlAs Infrared Light Emitting Diode

Name: LN175
SKU: LN175-59818

Panasonic Semiconductor

The LN175 by Panasonic Semiconductor is a GaAlAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LN175
Manufacturer	Panasonic Semiconductor
File Size	42.41 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN175_PanasonicSemiconductor.pdf
Additional preview pages of the LN175 datasheet.

High-power output, high-efficiency : PO = 12 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ. ) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambien.

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Published: Mar 22, 2005 |