Datasheet4U Logo Datasheet4U.com

LN175 GaAlAs Infrared Light Emitting Diode

LN175 Description

Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max.For optical control systems 1.5±0.2 Featu.

LN175 Features

* High-power output, high-efficiency : PO = 12 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ. ) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 m

📥 Download Datasheet

Preview of LN175 PDF
datasheet Preview Page 2

Datasheet Details

Part number
LN175
Manufacturer
Panasonic Semiconductor
File Size
42.41 KB
Datasheet
LN175_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

📁 Related Datasheet

  • LN170WP38 - Round Type LED (Panasonic)
  • LN100 - N-Channel MOSFET (Supertex)
  • LN1001 - single-chip Power Bank dedicated IC (natlinear)
  • LN10N10 - 10A/100V withstand voltage N-channel enhanced FET (natlinear)
  • LN1120 - 300mA Low Dropout CMOS Voltage Regulators (natlinear)
  • LN1121 - Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)
  • LN1130 - High Ripple-Rejection Low Dropout CMOS Voltage Regulator (natlinear)
  • LN113006 - General Purpose Relays (TE)

📌 All Tags

GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN175-like datasheet