LN175 Datasheet, Diode, Panasonic Semiconductor

LN175 Features

• Diode High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to

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Part number:

LN175

Manufacturer:

Panasonic Semiconductor

File Size:

42.41kb

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📄 Datasheet

Description:

Gaalas infrared light emitting diode.

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LN175

Panasonic Semiconductor

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