Datasheet Specifications
- Part number
- LNA2901L
- Manufacturer
- Panasonic Semiconductor
- File Size
- 40.43 KB
- Datasheet
- LNA2901L_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max.2-0.6±0.15 2.54 For optical contro.
Features
* High-power output, high-efficiency : Ie = 9 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0 ø5.0±0.2 Transparent epoxy resin package Parameter Power dissipation Forward current (DC) Pulse forward current ReverseLNA2901L Distributors
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