* High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0 ø5.0±0.2 Transparent epoxy resin package Parameter Power dissipation Forward current (DC) Pulse forward current Reverse
LNA2901L
Panasonic Semiconductor
40.43 KB
Gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical contro.
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