Part number:
LNA2903L
Manufacturer:
Panasonic Semiconductor
File Size:
51.46 KB
Description:
Gaas infrared light emitting diode.
* High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2
LNA2903L
Panasonic Semiconductor
51.46 KB
Gaas infrared light emitting diode.
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