Datasheet Details
- Part number
- 2SK3027
- Manufacturer
- Panasonic Semiconductor
- File Size
- 24.44 KB
- Datasheet
- 2SK3027_PanasonicSemiconductor.pdf
- Description
- Silicon N-Channel Power F-MOS FET
2SK3027 Description
Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET s .
2SK3027 Features
* q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
13.7
* 0.2
q Contactless relay q Diving circuit for a so
2SK3027 Applications
* +0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3
2.6±0.1 0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 60 ±20 ±50 ±100 125 60 2 150
* 55
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