2SK662 - Silicon N-Channel Junction FET
2SK662 Features
* 0.3+0.1
* 0.0 3 0.15+0.10
* 0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings (Ta = 25°C
