Datasheet4U Logo Datasheet4U.com

LN152 GaAs Infrared Light Emitting Diode

LN152 Description

Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .

LN152 Features

* High-power output, high-efficiency : PO = 10 mW (typ. ) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5

📥 Download Datasheet

Preview of LN152 PDF
datasheet Preview Page 2

Datasheet Details

Part number
LN152
Manufacturer
Panasonic Semiconductor
File Size
36.71 KB
Datasheet
LN152_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

📁 Related Datasheet

  • LN15 - Single Jacket Non-Armored (Samsung semiconductor)
  • LN15XB60 - Bridge Bridge (SHINDENGEN)
  • LN15XB60H - Bridge Bridge (SHINDENGEN)
  • LN100 - N-Channel MOSFET (Supertex)
  • LN1001 - single-chip Power Bank dedicated IC (natlinear)
  • LN10N10 - 10A/100V withstand voltage N-channel enhanced FET (natlinear)
  • LN1120 - 300mA Low Dropout CMOS Voltage Regulators (natlinear)
  • LN1121 - Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)

📌 All Tags

GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN152-like datasheet