Datasheet4U Logo Datasheet4U.com

LN162S GaAs Infrared Light Emitting Diode

LN162S Description

Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .

LN162S Features

* High-power output, high-efficiency : PO = 3.5 mW (typ. ) Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter Powe

📥 Download Datasheet

Preview of LN162S PDF
datasheet Preview Page 2

Datasheet Details

Part number
LN162S
Manufacturer
Panasonic Semiconductor
File Size
39.03 KB
Datasheet
LN162S_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

📁 Related Datasheet

  • LN16B - SAW Components (EPCOS)
  • LN100 - N-Channel MOSFET (Supertex)
  • LN1001 - single-chip Power Bank dedicated IC (natlinear)
  • LN10N10 - 10A/100V withstand voltage N-channel enhanced FET (natlinear)
  • LN1120 - 300mA Low Dropout CMOS Voltage Regulators (natlinear)
  • LN1121 - Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)
  • LN1130 - High Ripple-Rejection Low Dropout CMOS Voltage Regulator (natlinear)
  • LN113006 - General Purpose Relays (TE)

📌 All Tags

GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN162S-like datasheet