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OH10003 GaAs Hall Device

OH10003 Description

GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor I .

OH10003 Features

* Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
* Input resistance: typ. 0.85 kΩ
* Satisfactory linearity of GaAs hall voltage with respect to the magnetic field
* Small temperature coefficient of the hall voltage: β ≤
* 0.06%/°C
* Sealed in the Mini

OH10003 Applications

* 0.16
* 0.06 + 0.2 + 0.1 0.4
* 0.05 + 0.1 1 OH10003 PD  T a 200 180 GaAs Hall Devices VH  Ta 240 B = 1 kG IC = 6 mA 200 1 600 1 400 RIN  Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 Input resistance RIN (Ω)
* 40 Hall voltage VH (mV) 1 200

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GaAs Hall Device Panasonic Semiconductor
Panasonic Semiconductor OH10003-like datasheet