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MX0912B100 NPN microwave power transistors

MX0912B100 Description

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product speciļ¬cation Supersedes data of June 1992 1997 F.
NPN silicon planar epitaxial microwave power transistors.

MX0912B100 Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry i

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Datasheet Details

Part number
MX0912B100
Manufacturer
Philips
File Size
98.88 KB
Datasheet
MX0912B100_Philips.pdf
Description
NPN microwave power transistors

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NPN microwave power transistors Philips
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