MX0912B100 Datasheet - Philips

MX0912B100 NPN microwave power transistors

NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mount.

MX0912B100 Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry i

MX0912B100 Datasheet (98.88 KB)