MX0912B351Y NPN microwave power transistors

Philips

Description

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 1997 Feb 19 Phi.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

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Datasheet Specifications

Part number: MX0912B351Y
Manufacturer: Philips
File Size: 92.76 KB
Datasheet: MX0912B351Y_Philips.pdf
Description: NPN microwave power transistors

Features

* Interdigitated structure; high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gives goo

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