MX0912B351Y - NPN microwave power transistors

Philips

Datasheet Details

Part number	MX0912B351Y
Manufacturer	Philips
File Size	92.76 KB
Description	NPN microwave power transistors
Datasheet	MX0912B351Y_Philips.pdf

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

Interdigitated structure; high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

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Published: May 3, 2005 |