MX0912B251Y Datasheet - Philips

MX0912B251Y NPN microwave power transistors

olumns c b Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base.

MX0912B251Y Features

* Interdigitated structure; high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry gives goo

MX0912B251Y_Philips.pdf