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MX0912B251Y NPN microwave power transistors

MX0912B251Y Description

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product speciļ¬cation Supersedes data of November 1994 1997 Feb 19 Phi.
olumns c b Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.

MX0912B251Y Features

* Interdigitated structure; high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gives goo

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Datasheet Details

Part number
MX0912B251Y
Manufacturer
Philips
File Size
92.34 KB
Datasheet
MX0912B251Y_Philips.pdf
Description
NPN microwave power transistors

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NPN microwave power transistors Philips
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