MX0912B251Y - NPN microwave power transistors

Philips

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Datasheet Details

Part number	MX0912B251Y
Manufacturer	Philips
File Size	92.34 KB
Description	NPN microwave power transistors
Datasheet	MX0912B251Y_Philips.pdf

MX0912B251Y Product details

Description

olumns c b Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.It is mounted in common base configuration, and specified in class C.3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadb

Features

Interdigitated structure; high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

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Published: May 3, 2005 |