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MX0912B251Y Datasheet - Philips

MX0912B251Y - NPN microwave power transistors

olumns c b Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

It is mounted in common base

MX0912B251Y Features

* Interdigitated structure; high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry gives goo

MX0912B251Y_Philips.pdf

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Datasheet Details

Part number:

MX0912B251Y

Manufacturer:

Philips

File Size:

92.34 KB

Description:

Npn microwave power transistors.

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