MX0912B251Y - NPN microwave power transistors
olumns c b Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
It is mounted in common base
MX0912B251Y Features
* Interdigitated structure; high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry gives goo
