PBSS3540M Datasheet - Philips

PBSS3540M PNP low V transistor

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2540M. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT *40 *500 <.

PBSS3540M Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Power management:

* DC-DC converter

PBSS3540M Datasheet (64.08 KB)