PBSS3540M Datasheet - Philips

PNP low V transistor

PBSS3540M Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Power management:

* DC-DC converter

PBSS3540M General Description

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2540M. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT *40 *500 <.

PBSS3540M Datasheet (64.08 KB)

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Datasheet Details

Part number:

PBSS3540M

Manufacturer:

Philips

File Size:

64.08 KB

Description:

Pnp low v transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 Aug 12 Ph.

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PBSS3540M PNP low transistor Philips

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PBSS3540M Features

PBSS3540M General Description

Datasheet Details

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