PBSS3515M Datasheet - NXP

PBSS3515M PNP Transistor

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2515M. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resist.

PBSS3515M Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Power management:

* DC-DC converter

PBSS3515M-NXP.pdf