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PBSS3515VS PNP Transistor

PBSS3515VS Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Product speciļ¬cation Supersedes data of 2001 Sep 27 2001.
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15. 1.

PBSS3515VS Features

* 300 mW total power dissipation
* Very small 1.6 x 1.2 mm ultra thin package
* Self alignment during soldering due to straight leads
* Low collector-emitter saturation voltage
* High current capability
* Improved thermal behaviour due to flat leads

PBSS3515VS Applications

* General purpose switching and muting
* Low frequency driver circuits
* LCD backlighting
* Audio frequency general purpose amplifier applications
* Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 5 4 PBSS3515VS QUICK REFEREN

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