Datasheet4U Logo Datasheet4U.com

PBSS3515VS Datasheet - NXP

PBSS3515VS - PNP Transistor

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.

*15 *1 <500 UNIT V A mΩ 6 5 4 TR2 TR1 DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package.

NPN complement: PBSS2515VS.

MARKING TYPE NUMBER PBS

PBSS3515VS Features

* 300 mW total power dissipation

* Very small 1.6 x 1.2 mm ultra thin package

* Self alignment during soldering due to straight leads

* Low collector-emitter saturation voltage

* High current capability

* Improved thermal behaviour due to flat leads

PBSS3515VS_PhilipsSemiconductors.pdf

Preview of PBSS3515VS PDF
PBSS3515VS Datasheet Preview Page 2 PBSS3515VS Datasheet Preview Page 3

Datasheet Details

Part number:

PBSS3515VS

Manufacturer:

NXP ↗

File Size:

77.98 KB

Description:

Pnp transistor.

📁 Related Datasheet

📌 All Tags