PBSS3515VS Datasheet - NXP

PBSS3515VS PNP Transistor

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. *15 *1 <500 UNIT V A mΩ 6 5 4 TR2 TR1 DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. MARKING TYPE NUMBER PBS.

PBSS3515VS Features

* 300 mW total power dissipation

* Very small 1.6 x 1.2 mm ultra thin package

* Self alignment during soldering due to straight leads

* Low collector-emitter saturation voltage

* High current capability

* Improved thermal behaviour due to flat leads

PBSS3515VS_PhilipsSemiconductors.pdf