PBSS3515VS PNP Transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Product speciﬁcation Supersedes data of 2001 Sep 27 2001.
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15. 1.

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Datasheet Specifications

Part number: PBSS3515VS
Manufacturer: NXP ↗
File Size: 77.98 KB
Datasheet: PBSS3515VS_PhilipsSemiconductors.pdf
Description: PNP Transistor

Features

* 300 mW total power dissipation
* Very small 1.6 x 1.2 mm ultra thin package
* Self alignment during soldering due to straight leads
* Low collector-emitter saturation voltage
* High current capability
* Improved thermal behaviour due to flat leads

Applications

* General purpose switching and muting
* Low frequency driver circuits
* LCD backlighting
* Audio frequency general purpose amplifier applications
* Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 5 4 PBSS3515VS QUICK REFEREN

PBSS3515VS Distributors

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PBSS3515VS PNP Transistor NXP

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