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PBSS3515E Datasheet - NXP

PBSS3515E PNP low VCEsat (BISS) transistor

PBSS3515E Features

* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s

PBSS3515E_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PBSS3515E

Manufacturer:

NXP ↗

File Size:

135.64 KB

Description:

Pnp low vcesat (biss) transistor.

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TAGS

PBSS3515E PBSS3515E PNP low VCEsat BISS transistor NXP

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