PBSS3515E Datasheet, Transistor, NXP

✔ PBSS3515E Features

s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efﬁciency due to

✔ PBSS3515E Application

s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g.

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Part number:

PBSS3515E

Manufacturer:

NXP ↗

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135.64 KB

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📄 Datasheet

Description:

Pnp low vcesat (biss) transistor. PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2515E. 1.