PDS3710 Datasheet - Potens semiconductor

PDS3710 N+P Channel MOSFETs

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

PDS3710 Features

* Fast switching

* Green Device Available

* Suit for 4.5V Gate Drive Applications Applications

* DC Fan

* Motor Drive Applications

* Networking

* Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parame

PDS3710-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDS3710

Manufacturer:

Potens semiconductor

File Size:

494.95 KB

Description:

N+p channel mosfets.

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PDS3710 PDS3710 N +P Channel MOSFETs Potens semiconductor

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