PDS3812 Datasheet - Potens semiconductor

PDS3812 Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS3812 Features

* 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDS3812 Datasheet (393.09 KB)

PDS3812 Datasheet Preview — Preview of PDS3812 PDF

Datasheet Details

Part number:

PDS3812

Manufacturer:

Potens semiconductor

File Size:

393.09 KB

Description:

Dual n-channel mosfets.

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PDS3812 Dual N-Channel MOSFETs Potens semiconductor

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