PDS3812 Dual N-Channel MOSFETs

Potens semiconductor

Description

30V Dual N-Channel MOSFETs PDS3812 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* 30V,7.5A, RDS(ON) =20mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

PDS3812 Distributors

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