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PDS3808 N-Channel MOSFETs

PDS3808 Description

30V N-Channel MOSFETs PDS3808 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDS3808 Features

* 30V,9A, RDS(ON) =11mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDS3808
Manufacturer
Potens semiconductor
File Size
707.71 KB
Datasheet
PDS3808-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDS3808-like datasheet