PDS3808 Datasheet (Potens semiconductor)

PDS3808, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDS3808 Features

* 30V,9A, RDS(ON) =11mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Dual SOP8 Pin Configuration D2 D2 D1 D1 D1 G1 G2 G1S2 S1 S1 G2 Applications D2

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR S2 Absolute Maximum Ratings