PDS3808 N-Channel MOSFETs

Potens semiconductor

Description

30V N-Channel MOSFETs PDS3808 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* 30V,9A, RDS(ON) =11mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

PDS3808 Distributors

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Potens semiconductor PDS3808-like datasheet