BUL770 Datasheet - Power Innovations Limited

BUL770 NPN Transistor

BUL770 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maxi.

BUL770_PowerInnovationsLimited.pdf