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BULD25DR NPN Transistor

BULD25DR Description

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER.
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s).

BULD25DR Features

* 3 Places 0,50 (0.020) x 45°NOM 0,25 (0.010) 5,21 (0.2

BULD25DR Applications

* absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage SYMBOL VCES VCBO VCEO V EBO VALUE 600 600 400 9 UNIT V V V V PRODUCT INFORMATION Info

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NPN Transistor Power Innovations Limited
Power Innovations Limited BULD25DR-like datasheet