RF2312 Datasheet - RF Micro Devices

RF2312 - LINEAR GENERAL PURPOSE AMPLIFIER

RF2312 Absolute Maximum Ratings Parameter Device Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Maximum Junction Temperature Rating 125 +18 20:1 -40 to +85 -40 to +150 150 Unit mA dBm °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the .

RF2312 3 Typical Applications CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks Laser Diode Driver Return Channel Amplifier Base Stations LINEAR GENERAL PURPOSE AMPLIFIER 3 -A0.160 0.152 0.018 0.014 0.010 0.004 The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use a.

RF2312 Features

* DC to well over 2500MHz Operation

* Internally Matched Input and Output

* 15dB Small Signal Gain RF IN 1 GND 2 GND 3 GND 4 8 7 6 5 RF OUT GND GND GND

* 3.8dB Noise Figure

* +20dBm Output Power

* Single 5V to 12V Positive Power Supply Ordering In

RF2312_RFMicroDevices.pdf