H5N2306PF - Silicon N Channel MOS FET High Speed Power Switching
H5N2306PF Features
* Low on-resistance
* Low leakage current www.DataSheet4U.com
* High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2306PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source vol