H5N2505DS
Renesas ↗ Technology
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Silicon n channel mos fet high speed power switching.
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H5N2505DL - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2505DL, H5N2505DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1107-0300 Rev.3.00 Oct 16, 2006
Features
• Low on-resistance • Low dr.
H5N2501LD - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2501LD, H5N2501LS, H5N2501LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1250-0200 Rev.2.00 Jul.21,2005
Features
• Low on-resistanc.
H5N2501LM - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2501LD, H5N2501LS, H5N2501LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1250-0200 Rev.2.00 Jul.21,2005
Features
• Low on-resistanc.
H5N2501LS - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2501LD, H5N2501LS, H5N2501LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1250-0200 Rev.2.00 Jul.21,2005
Features
• Low on-resistanc.
H5N2502CF - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2502CF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0480-0100 Rev.1.00 Nov.26.2004
Features
• Low on-resistance • Low leakage curren.
H5N2503P - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005
Features
.DataSheet4.
H5N2504DL - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2504DL, H5N2504DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1106-0200 (Previous: ADE-208-1375A) Rev.2.00 Sep 07, 2005
Features
ww.
H5N2504DS - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2504DL, H5N2504DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1106-0200 (Previous: ADE-208-1375A) Rev.2.00 Sep 07, 2005
Features
ww.
H5N2507P - High Speed Power Switching MOSFET
(Renesas Technology)
H5N2507P
250V - 50A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
Low.
H5N2508DL - Silicon N Channel MOS FET High Speed Power Switching
(Renesas Technology)
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005
Features
.