H5N2507P

High Speed Power Switching MOSFET

Renesas Technology

* Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)

* Low leakage current

* High speed switching

* Low gate charge

* Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Dr

H5N2507P

120.73 KB

High speed power switching mosfet.

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