RJK03E9DPA Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK03E9DPA, Silicon N Channel Power MOS FET

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Renesa

RJK03E9DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V)

* Pb-free

* Halogen-free

* REJ03G1933-0210 Rev.2.10 May 20, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package na